The P-type SiC wafer with liquid phase method has the advantages of low resistance, high doping concentration, high quality and other advantages, which can meet the preparation needs of high-pressure bipolar devices such as N-channel SIC IGBT and GTO.

Crystal Type：4H/6H   Size：50.8±0.38 mm

Thickness：350±25μm   Micropipe Density：0 cm^-2

Resistivity：0.06~0.11 Ω∙cm